Description
The 2N5551 is an NPN bipolar junction transistor (BJT) with a collector-emitter voltage rating of 160V and a collector current of 0.6A. It is commonly used in high-voltage signal amplification, audio preamplifiers, and switching circuits. The transistor offers low noise characteristics, making it ideal for audio and RF applications where signal clarity is crucial. Its high voltage handling capability ensures stable performance in a variety of consumer and industrial electronic designs.
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